Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes
- Authors
- Byeon, Kyeong-Jae; Hong, Eun-Ju; Park, Hyoungwon; Cho, Joong-Yeon; Lee, Seong-Hwan; Jhin, Junggeun; Baek, Jong Hyeob; Lee, Heon
- Issue Date
- 31-1월-2011
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Gallium nitride; Light-emitting diodes; Nanoimprint; Photonic crystal; Full wafer scale
- Citation
- THIN SOLID FILMS, v.519, no.7, pp.2241 - 2246
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 519
- Number
- 7
- Start Page
- 2241
- End Page
- 2246
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/113240
- DOI
- 10.1016/j.tsf.2010.10.039
- ISSN
- 0040-6090
- Abstract
- A UV-imprinting process for a full wafer was developed to enhance the light extraction of GaN-based green light-emitting diodes (LEDs). A polyvinyl chloride flexible stamp was used in the imprinting process to compensate for the poor flatness of the LED wafer. Two-dimensional photonic crystal patterns with pitches ranging from 600 to 900 nm were formed on the p-GaN top cladding layer of a 2 inch diameter wafer using nanoimprint and reactive ion etching processes. As a result, the optical output power of the patterned LED device was increased by up to 44% at a driving current of 20 mA by suppressing the total internal reflection and enhancing the irregular scattering of photons at the patterned p-GaN surface. (C) 2010 Elsevier B.V. All rights reserved.
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