Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen postannealing treatment

Abstract

The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/Si3N4/Ti sample annealed at 250 degrees C for 30 min in a N-2-H-2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 mu A, respectively, whereas the current ratio increases from similar to 0.5x10(1) to similar to 10(3). In addition, its reliability features, including its endurance (>10(3) cycles) and retention time (>ten years), have been improved due to the reduction in the interface trap. (C) 2011 American Institute of Physics. [doi:10.1063/1.3525991]