Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH4-NH3 plasma
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Daehyun | - |
dc.contributor.author | Lee, Sujin | - |
dc.contributor.author | Kim, Byungwhan | - |
dc.contributor.author | Kang, Byung Jun | - |
dc.contributor.author | Kim, Donghwan | - |
dc.date.accessioned | 2021-09-07T16:20:56Z | - |
dc.date.available | 2021-09-07T16:20:56Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-01 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/113304 | - |
dc.description.abstract | Using pulsed, plasma-enhanced chemical vapor deposition system, silicon nitride films were deposited from SiH4 and NH3 at room temperature. Duty ratio was controlled in a range of 20-100% incrementally by 20% at radio frequency bias powers of 50, 70, and 90 W. Reflectance was studied as a function of the process parameters mentioned earlier. The impact of duty ratio on the reflectance was prominent at 70 W and this was strongly correlated with a ratio of high ion energy to low ion energy. Interestingly, the reflectance at other powers yielded a strong correlation with high ion energy flux. A comparison study with other film properties revealed that the reflectance decreased with a decrease in film thickness. A neural network model was constructed to predict various effects of diagnostic variables on the reflectance. (C) 2010 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | INDUCED ION ENERGY | - |
dc.subject | IMPACT | - |
dc.title | Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH4-NH3 plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Donghwan | - |
dc.identifier.doi | 10.1016/j.cap.2010.11.013 | - |
dc.identifier.wosid | 000288784400011 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.11, no.1, pp.S43 - S46 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | S43 | - |
dc.citation.endPage | S46 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INDUCED ION ENERGY | - |
dc.subject.keywordPlus | IMPACT | - |
dc.subject.keywordAuthor | Silicon nitride | - |
dc.subject.keywordAuthor | Pulsed | - |
dc.subject.keywordAuthor | Plasma-enhanced chemical vapor deposition | - |
dc.subject.keywordAuthor | Reflectance | - |
dc.subject.keywordAuthor | Model | - |
dc.subject.keywordAuthor | Room temperature | - |
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