Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH4-NH3 plasma
- Authors
- Kim, Daehyun; Lee, Sujin; Kim, Byungwhan; Kang, Byung Jun; Kim, Donghwan
- Issue Date
- 1월-2011
- Publisher
- ELSEVIER
- Keywords
- Silicon nitride; Pulsed; Plasma-enhanced chemical vapor deposition; Reflectance; Model; Room temperature
- Citation
- CURRENT APPLIED PHYSICS, v.11, no.1, pp.S43 - S46
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 11
- Number
- 1
- Start Page
- S43
- End Page
- S46
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/113304
- DOI
- 10.1016/j.cap.2010.11.013
- ISSN
- 1567-1739
- Abstract
- Using pulsed, plasma-enhanced chemical vapor deposition system, silicon nitride films were deposited from SiH4 and NH3 at room temperature. Duty ratio was controlled in a range of 20-100% incrementally by 20% at radio frequency bias powers of 50, 70, and 90 W. Reflectance was studied as a function of the process parameters mentioned earlier. The impact of duty ratio on the reflectance was prominent at 70 W and this was strongly correlated with a ratio of high ion energy to low ion energy. Interestingly, the reflectance at other powers yielded a strong correlation with high ion energy flux. A comparison study with other film properties revealed that the reflectance decreased with a decrease in film thickness. A neural network model was constructed to predict various effects of diagnostic variables on the reflectance. (C) 2010 Elsevier B. V. All rights reserved.
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