Characterization of dual floating gate memory devices constructed on glass
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sungsu | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-07T16:39:42Z | - |
dc.date.available | 2021-09-07T16:39:42Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-01 | - |
dc.identifier.issn | 0038-1098 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/113407 | - |
dc.description.abstract | The performance of dual floating gate memory devices constructed on glass is examined in this study. The dual floating gate memory device is composed of a ZnO transistor with a bottom-gate oxide layer whose two laterally separated regions are embedded with Al nanoparticles. For the memory device, four different states are achieved through Fowler-Nordheim (F-N) tunneling and channel hot electron (CHE) injection. Each of these four different states is distinguished by a difference of about 0.5 V in the threshold voltage shift. A detailed description on the four-state operation is given in this paper. (C) 2010 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | NONVOLATILE MEMORY | - |
dc.subject | FLASH MEMORY | - |
dc.subject | FABRICATION | - |
dc.subject | TRANSISTORS | - |
dc.title | Characterization of dual floating gate memory devices constructed on glass | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cho, Kyoungah | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1016/j.ssc.2010.10.044 | - |
dc.identifier.scopusid | 2-s2.0-78650517070 | - |
dc.identifier.wosid | 000286787200014 | - |
dc.identifier.bibliographicCitation | SOLID STATE COMMUNICATIONS, v.151, no.2, pp.151 - 154 | - |
dc.relation.isPartOf | SOLID STATE COMMUNICATIONS | - |
dc.citation.title | SOLID STATE COMMUNICATIONS | - |
dc.citation.volume | 151 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 151 | - |
dc.citation.endPage | 154 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | FLASH MEMORY | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordAuthor | Aluminum nanoparticles | - |
dc.subject.keywordAuthor | Dual-floating gate memory | - |
dc.subject.keywordAuthor | 2-bit operation | - |
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