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A p-n heterojunction diode constructed with A p-Si nanowire and an n-ZnO nanoparticle thin-film by dielectrophoresis

Authors
Kim, K.Lee, M.Yun, J.Kim, S.
Issue Date
2011
Publisher
Korean Institute of Electrical Engineers
Keywords
Dielectrophoresis; Nanoparticle; Nanowire; P-n heterojunction; Si; Zno
Citation
Transactions of the Korean Institute of Electrical Engineers, v.60, no.1, pp.105 - 108
Indexed
SCOPUS
KCI
Journal Title
Transactions of the Korean Institute of Electrical Engineers
Volume
60
Number
1
Start Page
105
End Page
108
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/114647
DOI
10.5370/KIEE.2011.60.1.105
ISSN
1975-8359
Abstract
Newly-developed fabrication of a p-n heterojunction diode constructed with a p-Si nanowire (NW) and an n-ZnO nanoparticle (NP) thin-film by the dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 Vp-p at the input frequency of 1 MHz, the most efficient assembly of the n-ZnO NPs is shown for the fabrication of the p-n heterojunction diode with a p-Si NW. The p-n heterojunction diode fabricated in this study represents current rectifying characteristics with the turn on voltage of 1.1 V. The diode can be applied to the fabrication of optoelectrical devices such as photodetectors, light-emitting diodes (LEDs), or solar cells based on the high conductivity of the NW and the high surface to volume ratio of the NP thin film.
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