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Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing
- Authors
- Kim, Minseok; You, In-Kyu; Han, Hyun; Jung, Soon-Won; Kim, Tae-Youb; Ju, Byeong-Kwon; Koo, Jae Bon
- Issue Date
- 2011
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- conducting polymers; electrical resistivity; electrodes; organic insulating materials; organic semiconductors; printing; thin film transistors
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.8, pp.H333 - H336
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 14
- Number
- 8
- Start Page
- H333
- End Page
- H336
- ISSN
- 1099-0062
- Abstract
- We report on the fabrication of organic thin-film transistors (OTFTs) with a reverse-offset-printed Ag metal source/drain (S/D) electrode pattern. The printed electrodes had a channel length of less than 5 mu m and resistivity of 3 x 10(-6) Omega cm. The OTFTs were fabricated from regioregular poly(3-hexylthiophene) as the semiconductor and poly(methyl methacrylate) as the gate insulator. The transfer and output characteristics of a top-gate OTFT with a channel length of 5 mu m were evaluated. Here we discuss in detail the technological challenges encountered with reverse offset printing and the failure modes. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3591435] All rights reserved.
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