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Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing

Authors
Kim, MinseokYou, In-KyuHan, HyunJung, Soon-WonKim, Tae-YoubJu, Byeong-KwonKoo, Jae Bon
Issue Date
2011
Publisher
ELECTROCHEMICAL SOC INC
Keywords
conducting polymers; electrical resistivity; electrodes; organic insulating materials; organic semiconductors; printing; thin film transistors
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.8, pp H333 - H336
Indexed
SCI
SCIE
SCOPUS
Journal Title
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume
14
Number
8
Start Page
H333
End Page
H336
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/114952
DOI
10.1149/1.3591435
ISSN
1099-0062
Abstract
We report on the fabrication of organic thin-film transistors (OTFTs) with a reverse-offset-printed Ag metal source/drain (S/D) electrode pattern. The printed electrodes had a channel length of less than 5 mu m and resistivity of 3 x 10(-6) Omega cm. The OTFTs were fabricated from regioregular poly(3-hexylthiophene) as the semiconductor and poly(methyl methacrylate) as the gate insulator. The transfer and output characteristics of a top-gate OTFT with a channel length of 5 mu m were evaluated. Here we discuss in detail the technological challenges encountered with reverse offset printing and the failure modes. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3591435] All rights reserved.
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