Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Byoungjun | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Kim, Sungsu | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-07T22:01:04Z | - |
dc.date.available | 2021-09-07T22:01:04Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011 | - |
dc.identifier.issn | 1931-7573 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/115071 | - |
dc.description.abstract | Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm(2)/V.s and their on/off ratio was in the range of 10(4)-10(5). The threshold voltages of the programmed and erased states were negligibly changed up to 10(3) cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | TRANSPARENT OXIDE | - |
dc.title | Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cho, Kyoungah | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1007/s11671-010-9789-5 | - |
dc.identifier.scopusid | 2-s2.0-79952705179 | - |
dc.identifier.wosid | 000289104200041 | - |
dc.identifier.bibliographicCitation | NANOSCALE RESEARCH LETTERS, v.6 | - |
dc.relation.isPartOf | NANOSCALE RESEARCH LETTERS | - |
dc.citation.title | NANOSCALE RESEARCH LETTERS | - |
dc.citation.volume | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TRANSPARENT OXIDE | - |
dc.subject.keywordAuthor | Flexible devices | - |
dc.subject.keywordAuthor | Low temperature | - |
dc.subject.keywordAuthor | Nanoparticles | - |
dc.subject.keywordAuthor | Non-volatile memory | - |
dc.subject.keywordAuthor | Thin-film transistors | - |
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