Strong perpendicular magnetic anisotropy in an MgO/CoFeB/Pd unit structure with a thick CoFeB layer
DC Field | Value | Language |
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dc.contributor.author | Jung, J. H. | - |
dc.contributor.author | Lim, S. H. | - |
dc.contributor.author | Lee, S. R. | - |
dc.date.accessioned | 2021-09-07T22:14:58Z | - |
dc.date.available | 2021-09-07T22:14:58Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2010-12-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/115137 | - |
dc.description.abstract | A strong perpendicular magnetic anisotropy (PMA) is formed in an MgO/CoFeB/Pd unit structure for an MgO-based magnetic tunnel junction. The most important factors for a strong PMA are the composition and the thickness of the CoFeB layer. A strong PMA is observed for the samples fabricated using the CoFeB target with a high Co/Fe ratio and annealed at 300 degrees C for 1 or 2 h. The PMA is formed up to a CoFeB layer thickness as thick as 2.5 nm, although the strongest PMA, with an out-of-plane coercivity of 1068 Oe and a PMA energy density of 2.7 X 10(6) erg/cc, is seen at a CoFeB thickness of 2.0 nm. The systematic study indicates that the PMA is attributed not to the interface effects but rather to the bulk effect of forming a Pd-rich, Co-Pd alloy, as confirmed by x-ray photoelectron spectroscopy depth profile and x-ray diffraction experiments. The thick CoFeB layer is expected to reduce the template effect from the Pd layer during the annealing, and therefore increase the tunneling magnetoresistance of the MgO-based magnetic tunnel junction. (c) 2010 American Institute of Physics. [doi: 10.1063/1.3516497] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | TUNNEL-JUNCTIONS | - |
dc.subject | REVERSAL | - |
dc.title | Strong perpendicular magnetic anisotropy in an MgO/CoFeB/Pd unit structure with a thick CoFeB layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lim, S. H. | - |
dc.contributor.affiliatedAuthor | Lee, S. R. | - |
dc.identifier.doi | 10.1063/1.3516497 | - |
dc.identifier.scopusid | 2-s2.0-78751560549 | - |
dc.identifier.wosid | 000285474100073 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.108, no.11 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 108 | - |
dc.citation.number | 11 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TUNNEL-JUNCTIONS | - |
dc.subject.keywordPlus | REVERSAL | - |
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