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Strong perpendicular magnetic anisotropy in an MgO/CoFeB/Pd unit structure with a thick CoFeB layer

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dc.contributor.authorJung, J. H.-
dc.contributor.authorLim, S. H.-
dc.contributor.authorLee, S. R.-
dc.date.accessioned2021-09-07T22:14:58Z-
dc.date.available2021-09-07T22:14:58Z-
dc.date.created2021-06-14-
dc.date.issued2010-12-01-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/115137-
dc.description.abstractA strong perpendicular magnetic anisotropy (PMA) is formed in an MgO/CoFeB/Pd unit structure for an MgO-based magnetic tunnel junction. The most important factors for a strong PMA are the composition and the thickness of the CoFeB layer. A strong PMA is observed for the samples fabricated using the CoFeB target with a high Co/Fe ratio and annealed at 300 degrees C for 1 or 2 h. The PMA is formed up to a CoFeB layer thickness as thick as 2.5 nm, although the strongest PMA, with an out-of-plane coercivity of 1068 Oe and a PMA energy density of 2.7 X 10(6) erg/cc, is seen at a CoFeB thickness of 2.0 nm. The systematic study indicates that the PMA is attributed not to the interface effects but rather to the bulk effect of forming a Pd-rich, Co-Pd alloy, as confirmed by x-ray photoelectron spectroscopy depth profile and x-ray diffraction experiments. The thick CoFeB layer is expected to reduce the template effect from the Pd layer during the annealing, and therefore increase the tunneling magnetoresistance of the MgO-based magnetic tunnel junction. (c) 2010 American Institute of Physics. [doi: 10.1063/1.3516497]-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.subjectTUNNEL-JUNCTIONS-
dc.subjectREVERSAL-
dc.titleStrong perpendicular magnetic anisotropy in an MgO/CoFeB/Pd unit structure with a thick CoFeB layer-
dc.typeArticle-
dc.contributor.affiliatedAuthorLim, S. H.-
dc.contributor.affiliatedAuthorLee, S. R.-
dc.identifier.doi10.1063/1.3516497-
dc.identifier.scopusid2-s2.0-78751560549-
dc.identifier.wosid000285474100073-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.108, no.11-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume108-
dc.citation.number11-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTUNNEL-JUNCTIONS-
dc.subject.keywordPlusREVERSAL-
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