Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes
- Authors
- Oh, Joon-Ho; Kim, Kyoung-Kook; Hong, Hyun-Gi; Byeon, Kyeong-Jae; Lee, Heon; Yoon, Sang-Won; Ahn, Jae-Pyoung; Seong, Tae-Yeon
- Issue Date
- 12월-2010
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Light-emitting diode; ITO; Ohmic contact; Transparent electrode
- Citation
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.13, no.4, pp.272 - 275
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Volume
- 13
- Number
- 4
- Start Page
- 272
- End Page
- 275
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/115217
- DOI
- 10.1016/j.mssp.2010.12.005
- ISSN
- 1369-8001
- Abstract
- We have investigated the annealing-induced improved electrical properties of In(10 nm)/ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75 x 10(-3) Omega cm(2) upon annealing at 650 degrees C in air. X-ray photoemission spectroscopy (XPS) Ga 2p core levels obtained from the interface regions before and after annealing indicate a large band-bending of p-GaN, resulting in an increase in the Schottky barrier height. STEM/energy dispersive X-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-oxide. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. It is also shown that patterning by nano-imprint lithography improves the light output power of blue LEDs by 18-28% as compared to that of LEDs fabricated with unpatterned In/ITO contacts. (C) 2010 Elsevier Ltd. All rights reserved.
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