Fully room-temperature-fabricated TiN/TaOx/Pt nonvolatile memory devices

Abstract

The reliable resistive switching properties of TiN/TaOxPt structures fabricated with a fully room-temperature process are demonstrated in this letter. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to 10(5) cycles. No data loss was reported upon continuous read-out for more than 10(4) at 125 degrees C. Multilevel storage is feasible due to the dependence of the low resistance state (LRS) on the initial "SET" (switch from high to low RS) compliance current. The values of LRS showed no dependence on the size of the device, which correlated with the localized conductive filament mechanism. This nonvolatile multilevel memory effect and the fully room-temperature fabrication process make the TiN/TaOx/Pt memory devices promising for future nonvolatile memory application. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim