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Single crystalline aluminum nanowires with ideal resistivity
- Authors
- Lee, J. W.; Kang, M. G.; Kim, B. -S.; Hong, B. H.; Whang, D.; Hwang, S. W.
- Issue Date
- Nov-2010
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Aluminum; Nanostructure; Electrical resistivity/conductivity; Stress-induced growth
- Citation
- SCRIPTA MATERIALIA, v.63, no.10, pp.1009 - 1012
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCRIPTA MATERIALIA
- Volume
- 63
- Number
- 10
- Start Page
- 1009
- End Page
- 1012
- ISSN
- 1359-6462
- Abstract
- We present the stress-induced synthesis of aluminum nanowires having almost perfect crystallinity. Their resistivity is comparable to the lowest bulk value of aluminum, and thus unprecedentedly smaller than the ones observed in other metal nanostructures. We analyze the measured resistivity using the standard theory of scattering in metal wires, and the observed resistivity values are consistent with the infinite average grain size. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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