Analytical Threshold Voltage Model Including Effective Conducting Path Effect (ECPE) for Surrounding-Gate MOSFETs (SGMOSFETs) With Localized Charges
DC Field | Value | Language |
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dc.contributor.author | Yu, Yun Seop | - |
dc.contributor.author | Cho, Namki | - |
dc.contributor.author | Hwang, Sung Woo | - |
dc.contributor.author | Ahn, Doyeol | - |
dc.date.accessioned | 2021-09-07T23:18:39Z | - |
dc.date.available | 2021-09-07T23:18:39Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2010-11 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/115446 | - |
dc.description.abstract | On the basis of 2-D potential analysis performed while taking into account the effective conducting path effect, a new analytical model for threshold voltage in cylindrical surrounding-gate MOSFETs (SGMOSFETs) that contain localized charges is presented. From the 2-D Poisson's equation based on a parabolic potential approximation, a simple and accurate analytical expression for the threshold voltage is derived. The proposed model is validated using a 3-D device simulator, and good agreement is obtained for various device dimensions and charge distributions. This model can be used to investigate hot-carrier-induced degradation of SGMOSFETs. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Analytical Threshold Voltage Model Including Effective Conducting Path Effect (ECPE) for Surrounding-Gate MOSFETs (SGMOSFETs) With Localized Charges | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, Sung Woo | - |
dc.identifier.doi | 10.1109/TED.2010.2066278 | - |
dc.identifier.scopusid | 2-s2.0-78049257826 | - |
dc.identifier.wosid | 000283446600050 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.11, pp.3176 - 3180 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 57 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 3176 | - |
dc.citation.endPage | 3180 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Effective conducting path effect (ECPE) | - |
dc.subject.keywordAuthor | hot-carrier effects (HCEs) | - |
dc.subject.keywordAuthor | localized charge | - |
dc.subject.keywordAuthor | surface potential | - |
dc.subject.keywordAuthor | surrounding-gate MOSFET (SGMOSFET) | - |
dc.subject.keywordAuthor | threshold voltage | - |
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