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Analytical Threshold Voltage Model Including Effective Conducting Path Effect (ECPE) for Surrounding-Gate MOSFETs (SGMOSFETs) With Localized Charges
- Authors
- Yu, Yun Seop; Cho, Namki; Hwang, Sung Woo; Ahn, Doyeol
- Issue Date
- 11월-2010
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Effective conducting path effect (ECPE); hot-carrier effects (HCEs); localized charge; surface potential; surrounding-gate MOSFET (SGMOSFET); threshold voltage
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.11, pp.3176 - 3180
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 57
- Number
- 11
- Start Page
- 3176
- End Page
- 3180
- ISSN
- 0018-9383
- Abstract
- On the basis of 2-D potential analysis performed while taking into account the effective conducting path effect, a new analytical model for threshold voltage in cylindrical surrounding-gate MOSFETs (SGMOSFETs) that contain localized charges is presented. From the 2-D Poisson's equation based on a parabolic potential approximation, a simple and accurate analytical expression for the threshold voltage is derived. The proposed model is validated using a 3-D device simulator, and good agreement is obtained for various device dimensions and charge distributions. This model can be used to investigate hot-carrier-induced degradation of SGMOSFETs.
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