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Fabrication of high density nano-pillar type phase change memory devices using flexible AAO shaped template
- Authors
- Hong, Sung-Hoon; Bae, Byeong-Ju; Lee, Heon; Jeong, Jun-Ho
- Issue Date
- Nov-2010
- Publisher
- ELSEVIER
- Keywords
- Anodic alumina oxide (AAO) template; Nano-pillar device; Nanoimprint lithography; Phase change memory (PRAM); Conducting AFM
- Citation
- MICROELECTRONIC ENGINEERING, v.87, no.11, pp.2081 - 2084
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 87
- Number
- 11
- Start Page
- 2081
- End Page
- 2084
- ISSN
- 0167-9317
- Abstract
- In this study, the high density nano-pillar type phase change memory was fabricated using duplicating nano-patterns of the anodic alumina oxide (AAO) by nanoimprint process. The high density nano-hole array of AAO template was transferred to the flexible PVC polymer template using hot embossing method. To use the flexible AAO shaped template for UV-NIL the high density nano-pillar type Ge2Sb2Te5 patterns were fabricated, and the electrical properties of the device were evaluated by conducting atomic force microscopy, connected electrical measurement system. To use the flexible AAO shaped template for UV-NIL, high density GST pattern could be fabricated even on the flexible polyimide (PI) substrate. (C) 2010 Elsevier B.V. All rights reserved.
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