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Diffusion induced grain-boundary migration in SrO-doped CeO2 electrolyte and its effect on electrical properties

Authors
Cho, Pyeong-SeokPark, Seung-YoungKim, Jeong-JooDo, Hyoung-SeokPark, Hyun-MinLee, Jong-Heun
Issue Date
7-10월-2010
Publisher
ELSEVIER SCIENCE BV
Keywords
Diffusion induced grain-boundary migration; SrO-doped CeO2; Complex Impedance Spectroscopy; Grain-boundary conduction
Citation
SOLID STATE IONICS, v.181, no.31-32, pp.1420 - 1424
Indexed
SCIE
SCOPUS
Journal Title
SOLID STATE IONICS
Volume
181
Number
31-32
Start Page
1420
End Page
1424
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/115528
DOI
10.1016/j.ssi.2010.07.033
ISSN
0167-2738
Abstract
Diffusion induced grain-boundary migration (DIGM) was observed when 4 and 9 mol% SrO-doped CeO2 (SrDC) ceramics were heat-treated at 1300 degrees C after sintering at 1600 degrees C. In the 9 mol% SrDC specimen, the curvature and distance of boundary migration were increased significantly as the heat-treatment time was increased from 10 min to 10 h at 1300 degrees C. This induced a -2.9-fold increase of the apparent grain-boundary resistivity, which was explained by the physico-chemical change of the grain-boundary structure and/or the current constriction effect due to the undulated boundary morphology. (C) 2010 Elsevier B.V. All rights reserved.
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