Characterization of bulk GaN crystals grown from solution at near atmospheric pressure
DC Field | Value | Language |
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dc.contributor.author | Garces, N. Y. | - |
dc.contributor.author | Feigelson, B. N. | - |
dc.contributor.author | Freitas, J. A., Jr. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Myers-Ward, R. | - |
dc.contributor.author | Glaser, E. R. | - |
dc.date.accessioned | 2021-09-08T00:18:21Z | - |
dc.date.available | 2021-09-08T00:18:21Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2010-09-01 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/115700 | - |
dc.description.abstract | The properties of GaN crystals grown from solution at temperatures ranging from 780 to 810 degrees C and near atmospheric pressure similar to 0.14 MPa, have been investigated using low temperature X-band (similar to 9.5 GHz) electron paramagnetic resonance spectroscopy, micro-Raman spectroscopy, photoluminescense spectroscopy, and photoluminescence imaging. Our samples are spontaneously nucleated thin platelets of approximate dimensions of 2 x 2 x 0.025 mm(3), or samples grown on both polycrystalline and single crystal HVPE large-area (similar to 3 x 8 x 0.5 mm(3)) seeds. Electron paramagnetic resonance spectra consists of a single Lorentzian line with axial symmetry about the c-axis, with approximate g-values, g(parallel to) = 1.951 and g(perpendicular to) = 1.948 and a peak-to-peak linewidth of similar to 4.0 G. This resonance has been previously assigned to shallow impurity donors/conduction electrons in GaN and attributed to Si- and/or O impurities. Room temperature photoluminescence and photoluminescence imaging data from both Ga- and N-faces show different dominant emission bands, suggesting different incorporation of impurities and/or native defects. Raman scattering and X-ray diffraction show moderate to good crystalline quality. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | PHASE EPITAXIAL GAN | - |
dc.subject | AMMONOTHERMAL GAN | - |
dc.subject | SPIN-RESONANCE | - |
dc.subject | WURTZITE GAN | - |
dc.subject | DOPED GAN | - |
dc.subject | DONORS | - |
dc.subject | RAMAN | - |
dc.subject | SPECTROSCOPY | - |
dc.subject | LUMINESCENCE | - |
dc.subject | TEMPLATES | - |
dc.title | Characterization of bulk GaN crystals grown from solution at near atmospheric pressure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2010.04.012 | - |
dc.identifier.wosid | 000281173900013 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.312, no.18, pp.2558 - 2563 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 312 | - |
dc.citation.number | 18 | - |
dc.citation.startPage | 2558 | - |
dc.citation.endPage | 2563 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PHASE EPITAXIAL GAN | - |
dc.subject.keywordPlus | AMMONOTHERMAL GAN | - |
dc.subject.keywordPlus | SPIN-RESONANCE | - |
dc.subject.keywordPlus | WURTZITE GAN | - |
dc.subject.keywordPlus | DOPED GAN | - |
dc.subject.keywordPlus | DONORS | - |
dc.subject.keywordPlus | RAMAN | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | TEMPLATES | - |
dc.subject.keywordAuthor | Characterization | - |
dc.subject.keywordAuthor | Nitrides | - |
dc.subject.keywordAuthor | Semiconducting III-V materials | - |
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