Characterization of bulk GaN crystals grown from solution at near atmospheric pressure
- Authors
- Garces, N. Y.; Feigelson, B. N.; Freitas, J. A., Jr.; Kim, Jihyun; Myers-Ward, R.; Glaser, E. R.
- Issue Date
- 1-9월-2010
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Characterization; Nitrides; Semiconducting III-V materials
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.312, no.18, pp.2558 - 2563
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 312
- Number
- 18
- Start Page
- 2558
- End Page
- 2563
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/115700
- DOI
- 10.1016/j.jcrysgro.2010.04.012
- ISSN
- 0022-0248
- Abstract
- The properties of GaN crystals grown from solution at temperatures ranging from 780 to 810 degrees C and near atmospheric pressure similar to 0.14 MPa, have been investigated using low temperature X-band (similar to 9.5 GHz) electron paramagnetic resonance spectroscopy, micro-Raman spectroscopy, photoluminescense spectroscopy, and photoluminescence imaging. Our samples are spontaneously nucleated thin platelets of approximate dimensions of 2 x 2 x 0.025 mm(3), or samples grown on both polycrystalline and single crystal HVPE large-area (similar to 3 x 8 x 0.5 mm(3)) seeds. Electron paramagnetic resonance spectra consists of a single Lorentzian line with axial symmetry about the c-axis, with approximate g-values, g(parallel to) = 1.951 and g(perpendicular to) = 1.948 and a peak-to-peak linewidth of similar to 4.0 G. This resonance has been previously assigned to shallow impurity donors/conduction electrons in GaN and attributed to Si- and/or O impurities. Room temperature photoluminescence and photoluminescence imaging data from both Ga- and N-faces show different dominant emission bands, suggesting different incorporation of impurities and/or native defects. Raman scattering and X-ray diffraction show moderate to good crystalline quality. (C) 2010 Elsevier B.V. All rights reserved.
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