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Transparent nano-floating gate memory on glass

Authors
Park, ByoungjunCho, KyoungahKim, SungsuKim, Sangsig
Issue Date
20-8월-2010
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v.21, no.33
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
21
Number
33
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/115865
DOI
10.1088/0957-4484/21/33/335201
ISSN
0957-4484
Abstract
We construct fully transparent nano-floating gate memory devices on a glass substrate. These memory thin-film transistors consist of channel layers of ZnO films, electrodes of Al/ITO, and floating gate nodes of Al nanoparticles, exhibiting a transmittance of similar to 71% in the visible region. Their electron mobility, on/off ratio, and threshold voltage shift are estimated to be 0.92 cm(2) V-1 s(-1), about 10(4), and 3.1 V, respectively. Moreover, their programming/erasing, endurance and retention are characterized in this study. Our study suggests that our memory devices have great potential for realizing transparent systems-on-glass.
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공과대학 (전기전자공학부)
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