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Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors
- Authors
- Jang, Doyoung; Lee, Jae Woo; Tachi, Kiichi; Montes, Laurent; Ernst, Thomas; Kim, Gyu Tae; Ghibaudo, Gerard
- Issue Date
- 16-8월-2010
- Publisher
- AMER INST PHYSICS
- Keywords
- Ge-Si alloys; hole mobility; hole traps; MOSFET; nanoelectronics; nanowires; semiconductor device noise; semiconductor materials; semiconductor quantum wires; surface roughness
- Citation
- APPLIED PHYSICS LETTERS, v.97, no.7
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 97
- Number
- 7
- ISSN
- 0003-6951
- Abstract
- Low-frequency noise has been studied in compressively strained Si0.8Ge0.2 core-shell nanowire (NW) p-channel transistors compared with unstrained NWs. The noise has been well interpreted using the carrier number with correlated mobility fluctuation model. The volume trap density, N-t, lies in the range of 2.9x10(18)-4.3x10(19) cm(-3) eV(-1), which is similar to standard high-k planar devices. The impact of Coulomb and surface roughness scatterings is more significant in unstrained SiGe NWs. This result can be explained by the better carrier confinement at the central region of SiGe NWs due to the additional band offset in the compressively strained NWs. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3480424]
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