Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Younghun | - |
dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Hite, Jennifer | - |
dc.contributor.author | Eddy, Charles R., Jr. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-08T01:02:37Z | - |
dc.date.available | 2021-09-08T01:02:37Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2010-08-02 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/115901 | - |
dc.description.abstract | The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 degrees C. A further increase in the anneal temperature above 500 degrees C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 degrees C. The degradation at 600 degrees C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 degrees C and 165 degrees C revealed that both the ideality factor and SBH were stable up to 165 degrees C with increasing in-situ measurement temperature. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | P-TYPE GAN | - |
dc.subject | ALGAN/GAN | - |
dc.title | Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1016/j.tsf.2010.05.113 | - |
dc.identifier.wosid | 000280541400038 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.518, no.20, pp.5810 - 5812 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 518 | - |
dc.citation.number | 20 | - |
dc.citation.startPage | 5810 | - |
dc.citation.endPage | 5812 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | ALGAN/GAN | - |
dc.subject.keywordAuthor | Non-polar GaN | - |
dc.subject.keywordAuthor | Schottky barrier height | - |
dc.subject.keywordAuthor | Annealing | - |
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