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Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN
- Issue Date
- 2-8월-2010
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Non-polar GaN; Schottky barrier height; Annealing
- Citation
- THIN SOLID FILMS, v.518, no.20, pp.5810 - 5812
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 518
- Number
- 20
- Start Page
- 5810
- End Page
- 5812
- ISSN
- 0040-6090
- Abstract
- The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 degrees C. A further increase in the anneal temperature above 500 degrees C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 degrees C. The degradation at 600 degrees C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 degrees C and 165 degrees C revealed that both the ideality factor and SBH were stable up to 165 degrees C with increasing in-situ measurement temperature. (C) 2010 Elsevier B.V. All rights reserved.
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