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Observation of Suppressed Interdiffusion in FeRh/FePt-Ta Bilayer Thin Films

Authors
Jang, Sung-UkPark, Eon ByeongKim, Ji-HongPark, Ki-HoonLee, Ji SungKim, Young KeunHyun, SeungminLee, Hak-JooKwon, Soon-JuLee, Hwan-Soo
Issue Date
6월-2010
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
FePt-Ta; FeRh/FePt-Ta bilayer; ferromagnetic and antiferromagentic transition; interdiffusion
Citation
IEEE TRANSACTIONS ON MAGNETICS, v.46, no.6, pp.2104 - 2107
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON MAGNETICS
Volume
46
Number
6
Start Page
2104
End Page
2107
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/116340
DOI
10.1109/TMAG.2010.2042148
ISSN
0018-9464
Abstract
FeRh/FePt bilayers onMgO (100) substrates were fabricated by rf-magnetron sputtering, and the magnetic properties and microstructures of the bilayers were studied in terms of Ta addition to the storage layer. Compared to undoped FeRh/FePt bilayers, FeRh/FePt-Ta bilayer films showed improved magnetic properties and lower degree of interdiffusion. The FeRh/FePt-Ta bilayers clearly demonstrated the AFM-FM transition. Reduced interdiffusion by Ta segregation along grain boundaries was speculated to be a possible cause for the observed improvement in magnetic properties when fabricated at high temperature.
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