PROPERTIES OF COPPER LAYER ON Si(100) FROM Cu(dmamb)(2)

Abstract

Cu seed layer was deposited by chemical vapor deposition using new Cu precursor, Cu(dmamb)(2). The Cu layers still need the barrier layer to prevent the diffusion, so Ta and Ti were used for the barrier layer on Si(100). Low temperature (LT) copper buffer layer was introduced and the effect of the buffer on the Cu films was investigated. The grown Cu layers were analyzed using FESEM, XRD, and four point probe measurement. The Cu seed layers were successfully deposited using Cu(dmamb)(2) precursor. Better thickness uniformity was obtained in the Cu films with the LT Cu buffer, which lowered the electrical resistivity.