PROPERTIES OF COPPER LAYER ON Si(100) FROM Cu(dmamb)(2)
- Authors
- Jin, Seong-Eon; Lee, Dohan; Lee, Seungmoo; Choi, Jong-Mun; Kim, Bumjoon; Kim, Chang Gyoun; Chung, Tack-Mo; Byun, Dong-Jin
- Issue Date
- 6월-2010
- Publisher
- WORLD SCIENTIFIC PUBL CO PTE LTD
- Keywords
- CVD; buffer layer; barrier layer; Cu(dmamb)(2); diffusion
- Citation
- SURFACE REVIEW AND LETTERS, v.17, no.3, pp.307 - 310
- Indexed
- SCIE
SCOPUS
- Journal Title
- SURFACE REVIEW AND LETTERS
- Volume
- 17
- Number
- 3
- Start Page
- 307
- End Page
- 310
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/116391
- DOI
- 10.1142/S0218625X10013801
- ISSN
- 0218-625X
- Abstract
- Cu seed layer was deposited by chemical vapor deposition using new Cu precursor, Cu(dmamb)(2). The Cu layers still need the barrier layer to prevent the diffusion, so Ta and Ti were used for the barrier layer on Si(100). Low temperature (LT) copper buffer layer was introduced and the effect of the buffer on the Cu films was investigated. The grown Cu layers were analyzed using FESEM, XRD, and four point probe measurement. The Cu seed layers were successfully deposited using Cu(dmamb)(2) precursor. Better thickness uniformity was obtained in the Cu films with the LT Cu buffer, which lowered the electrical resistivity.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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