Mapping of magnetic anisotropy in strained ferromagnetic semiconductor GaMnAs films
- Authors
- Kim, Shinhee; Lee, Hakjoon; Yoo, Taehee; Lee, Sangyeop; Lee, Sanghoon; Liu, X.; Furdyna, J. K.
- Issue Date
- 15-5월-2010
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.107, no.10
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 107
- Number
- 10
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/116443
- DOI
- 10.1063/1.3427553
- ISSN
- 0021-8979
- Abstract
- The effect of strain on the magnetic anisotropy of GaMnAs films has been systematically investigated using Hall effect measurements. The magnitude of the strain, which was caused by differences in the lattice constant between the GaMnAs film and buffer layer, was controlled by adjustment of the alloy composition in the GaInAs buffer layer. The in-plane and out-of-plane components of the magnetic anisotropy were obtained from the angular dependence of the planar Hall resistance and the anomalous Hall resistance, respectively. The anisotropy constants obtained allow us to construct a three-dimensional magnetic free energy surface, which provides a clear understanding of the transition behavior of the magnetization between the in-plane and out-of-plane direction in the GaMnAs films. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3427553]
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.