Explicit Continuous Current-Voltage (I-V) Models for Fully-Depleted Surrounding-Gate MOSFETs (SGMOSFETs) with a Finite Doping Body

Abstract

An analytical and continuous dc model for cylindrical doped surrounding-gate MOSFETs (SGMOSFETs) in the fully-depleted regime is presented. Starting from Poisson's equation, an implicit charge equation is derived approximately by a superposition principle with the exact channel potential and the charge equations in the depletion approximation. Also, a new explicit charge equation is derived from the implicit charge equation. The current equations without any charge-sheet approximation are based on the implicit and explicit charge control models, and both of them are valid for all the operation regions (linear, saturation, and subthreshold) and traces the transition between them without any fitting parameters. In the case of the SGMOSFETs with the fully-depleted condition, both of results simulated from the SGMOSFET models reproduce various 3D simulation results within 5% errors.