Explicit Continuous Current-Voltage (I-V) Models for Fully-Depleted Surrounding-Gate MOSFETs (SGMOSFETs) with a Finite Doping Body
- Authors
- Yu, Yun Seop; Cho, Namki; Oh, Jung Hyun; Hwang, Sung Woo; Ahn, Doyeol
- Issue Date
- 5월-2010
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Surrounding-Gate MOSFET (SGMOSFET); Superposition Principle; Fully-Depleted; Charge Control Model
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.10, no.5, pp.3316 - 3320
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 10
- Number
- 5
- Start Page
- 3316
- End Page
- 3320
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/116566
- DOI
- 10.1166/jnn.2010.2271
- ISSN
- 1533-4880
- Abstract
- An analytical and continuous dc model for cylindrical doped surrounding-gate MOSFETs (SGMOSFETs) in the fully-depleted regime is presented. Starting from Poisson's equation, an implicit charge equation is derived approximately by a superposition principle with the exact channel potential and the charge equations in the depletion approximation. Also, a new explicit charge equation is derived from the implicit charge equation. The current equations without any charge-sheet approximation are based on the implicit and explicit charge control models, and both of them are valid for all the operation regions (linear, saturation, and subthreshold) and traces the transition between them without any fitting parameters. In the case of the SGMOSFETs with the fully-depleted condition, both of results simulated from the SGMOSFET models reproduce various 3D simulation results within 5% errors.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.