Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Shubnikov-de Haas and Aharonov Bohm effects in a graphene nanoring structure
- Issue Date
- 5-4월-2010
- Publisher
- AMER INST PHYSICS
- Keywords
- Aharonov-Bohm effect; electronic density of states; graphene; Landau levels; magnetoresistance; nanostructured materials
- Citation
- APPLIED PHYSICS LETTERS, v.96, no.14
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 96
- Number
- 14
- ISSN
- 0003-6951
- Abstract
- We observed the Shubnikov-de Haas and the Aharonov Bohm oscillations in a graphene nanoring structure of 1 mu m in diameter and with a 125 nm channel width. We found a separation of 2 Delta V-g=17.5 V between electron and hole Landau levels in the plot of longitudinal resistance as a function of gate voltage and magnetic field. This separation can be understood as a result of the transport gap, Delta V-t=20 V, in the density of state. The Aharonov Bohm effect was observed in magnetoconductance with poor visibility because of the short phase coherence length of the graphene nanoring structure.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.