Shubnikov-de Haas and Aharonov Bohm effects in a graphene nanoring structure
- Authors
- Yoo, Jai Seung; Park, Yung Woo; Skakalova, Viera; Roth, Siegmar
- Issue Date
- 5-4월-2010
- Publisher
- AMER INST PHYSICS
- Keywords
- Aharonov-Bohm effect; electronic density of states; graphene; Landau levels; magnetoresistance; nanostructured materials
- Citation
- APPLIED PHYSICS LETTERS, v.96, no.14
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 96
- Number
- 14
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/116645
- DOI
- 10.1063/1.3380616
- ISSN
- 0003-6951
- Abstract
- We observed the Shubnikov-de Haas and the Aharonov Bohm oscillations in a graphene nanoring structure of 1 mu m in diameter and with a 125 nm channel width. We found a separation of 2 Delta V-g=17.5 V between electron and hole Landau levels in the plot of longitudinal resistance as a function of gate voltage and magnetic field. This separation can be understood as a result of the transport gap, Delta V-t=20 V, in the density of state. The Aharonov Bohm effect was observed in magnetoconductance with poor visibility because of the short phase coherence length of the graphene nanoring structure.
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