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Improved Dc Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au Electrode Schemes

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dc.contributor.authorLee, Young Su-
dc.contributor.authorChoi, Hong Goo-
dc.contributor.authorHahn, Cheol-Koo-
dc.contributor.authorKim, Su Jin-
dc.contributor.authorKim, Tae Geun-
dc.date.accessioned2021-09-08T04:14:14Z-
dc.date.available2021-09-08T04:14:14Z-
dc.date.created2021-06-11-
dc.date.issued2010-04-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/116733-
dc.description.abstractWe report on the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with Ti/Al/Ti/Ni/Au multilayer ohmic electrodes on Si substrates. The specific contact resistance of the proposed electrode is as low as 8.8 x 10(-7) Omega cm(2), 5.7 times lower than that of the conventional Ti/Al/Ni/Au electrode. AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au ohmic electrodes show a high extrinsic transconductance of 104 mS/mm and a maximum current density of 346 mA/mm, which values are increased by 15.5% and 54%, respectively, as compared to those observed from the AlGaN/GaN HEMTs with Ti/Al/Ni/Au ohmic electrodes.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectOHMIC CONTACTS-
dc.subjectN-GAN-
dc.subjectF(MAX)-
dc.titleImproved Dc Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au Electrode Schemes-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Tae Geun-
dc.identifier.doi10.1938/jkps.56.1287-
dc.identifier.scopusid2-s2.0-77956388224-
dc.identifier.wosid000276783200009-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.4, pp.1287 - 1290-
dc.relation.isPartOfJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume56-
dc.citation.number4-
dc.citation.startPage1287-
dc.citation.endPage1290-
dc.type.rimsART-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.subject.keywordPlusOHMIC CONTACTS-
dc.subject.keywordPlusN-GAN-
dc.subject.keywordPlusF(MAX)-
dc.subject.keywordAuthorImprovement-
dc.subject.keywordAuthorHEMTs-
dc.subject.keywordAuthorTi/Al/Ti/Ni/Au-
dc.subject.keywordAuthorOhmic contact-
dc.subject.keywordAuthorDC performance-
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