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Fabrication of sub-micron 3-D structure using duo-mold UV-RIL process

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dc.contributor.authorHan, Kang-Soo-
dc.contributor.authorHong, Sung-Hoon-
dc.contributor.authorJeong, Jun-Ho-
dc.contributor.authorLee, Heon-
dc.date.accessioned2021-09-08T04:19:07Z-
dc.date.available2021-09-08T04:19:07Z-
dc.date.created2021-06-11-
dc.date.issued2010-04-
dc.identifier.issn0167-9317-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/116760-
dc.description.abstract3-D polymeric micro- and nano-structures were fabricated by the reversal imprint lithography technique using nano-patterned molds. A surface-treated quartz mold and a water-soluble poly vinyl alcohol (PVA) mold were used to make dual-side patterned, 2-D polymeric, micro- and nano-structures. First, UV-curable, polymeric resin was dropped onto the quartz mold, which was then covered with the PVA mold. The two stacked molds were pressed and exposed to UV-Iight to cure the resin. The cured polymeric resin (the reversal layer) was easily released from the quartz mold, because the surface of the latter was treated with an anti-stiction layer. The reversal layer, bound to the PVA mold, was transferred to a Si substrate by applying a thin layer of a UV-curable bonding agent. After bonding the reversal layer, the PVA mold was selectively removed by dipping in water. As a result, the dual-side patterned, thin polymeric 2-D structure was formed on the silicon substrate and, by repeating this process, 2-D nano-structures were stacked to form a 3-D nano-structure. By making use of the anti-stiction-treated, quartz mold and the water-soluble characteristic of the PVA material, the reliable release of the reversal layer was achieved. (C) 2009 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectNANOIMPRINT LITHOGRAPHY-
dc.subjectIMPRINT LITHOGRAPHY-
dc.subjectSUBSTRATE-
dc.subjectPOLYMER-
dc.titleFabrication of sub-micron 3-D structure using duo-mold UV-RIL process-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, Heon-
dc.identifier.doi10.1016/j.mee.2009.08.022-
dc.identifier.scopusid2-s2.0-75149178562-
dc.identifier.wosid000275264200016-
dc.identifier.bibliographicCitationMICROELECTRONIC ENGINEERING, v.87, no.4, pp.610 - 613-
dc.relation.isPartOfMICROELECTRONIC ENGINEERING-
dc.citation.titleMICROELECTRONIC ENGINEERING-
dc.citation.volume87-
dc.citation.number4-
dc.citation.startPage610-
dc.citation.endPage613-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusNANOIMPRINT LITHOGRAPHY-
dc.subject.keywordPlusIMPRINT LITHOGRAPHY-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordPlusPOLYMER-
dc.subject.keywordAuthorPVA(poly vinyl alcohol)-
dc.subject.keywordAuthorRIL(reversal imprint lithography)-
dc.subject.keywordAuthorNIL(nano-imprint lithography)-
dc.subject.keywordAuthorResidual thickness-
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