Size-dependent thermal conductivity of individual single-crystalline PbTe nanowires
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Roh, Jong Wook | - |
dc.contributor.author | Jang, So Young | - |
dc.contributor.author | Kang, Joohoon | - |
dc.contributor.author | Lee, Seunghyun | - |
dc.contributor.author | Noh, Jin-Seo | - |
dc.contributor.author | Kim, Woochul | - |
dc.contributor.author | Park, Jeunghee | - |
dc.contributor.author | Lee, Wooyoung | - |
dc.date.accessioned | 2021-09-08T04:34:47Z | - |
dc.date.available | 2021-09-08T04:34:47Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2010-03-08 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/116816 | - |
dc.description.abstract | We investigated the thermal conductivity of individual single-crystalline PbTe nanowires grown by a chemical vapor transport method. Thermal conductivities of PbTe nanowires 182-436 nm in diameter were measured using suspended microdevices. The thermal conductivity of a PbTe nanowire appeared to decrease with decreasing nanowire diameter and was measured to be 1.29 W/mK for a 182 nm nanowire at 300 K, which is about half of that of bulk PbTe. Our results indicate that phonon transport through a PbTe nanowire is effectively suppressed by the enhanced phonon boundary scattering due to size effects. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3352049] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SILICON NANOWIRES | - |
dc.subject | THERMOELECTRIC PROPERTIES | - |
dc.subject | MERIT | - |
dc.subject | DEVICES | - |
dc.subject | FIGURE | - |
dc.title | Size-dependent thermal conductivity of individual single-crystalline PbTe nanowires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jeunghee | - |
dc.identifier.doi | 10.1063/1.3352049 | - |
dc.identifier.scopusid | 2-s2.0-77949717048 | - |
dc.identifier.wosid | 000275588000068 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.96, no.10 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 96 | - |
dc.citation.number | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON NANOWIRES | - |
dc.subject.keywordPlus | THERMOELECTRIC PROPERTIES | - |
dc.subject.keywordPlus | MERIT | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | FIGURE | - |
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