Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque
DC Field | Value | Language |
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dc.contributor.author | Ahn, Jaehui | - |
dc.contributor.author | Ko, Geunwoo | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Hite, Jennifer | - |
dc.contributor.author | Eddy, Charles R., Jr. | - |
dc.date.accessioned | 2021-09-08T04:42:27Z | - |
dc.date.available | 2021-09-08T04:42:27Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2010-03 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/116854 | - |
dc.description.abstract | This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and rnicro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current-voltage measurements of the GaN rnicro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz-5 MHz. (C) 2009 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | GROWTH | - |
dc.subject | GAN | - |
dc.subject | NANOTUBES | - |
dc.subject | ARRAYS | - |
dc.title | Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1016/j.cap.2009.09.004 | - |
dc.identifier.scopusid | 2-s2.0-70350728393 | - |
dc.identifier.wosid | 000272279000063 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.10, no.2, pp.703 - 707 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 703 | - |
dc.citation.endPage | 707 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001437414 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | NANOTUBES | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Nanowire | - |
dc.subject.keywordAuthor | Electric field | - |
dc.subject.keywordAuthor | Alignment | - |
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