Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque
- Authors
- Ahn, Jaehui; Ko, Geunwoo; Kim, Jihyun; Mastro, Michael A.; Hite, Jennifer; Eddy, Charles R., Jr.
- Issue Date
- 3월-2010
- Publisher
- ELSEVIER
- Keywords
- GaN; Nanowire; Electric field; Alignment
- Citation
- CURRENT APPLIED PHYSICS, v.10, no.2, pp.703 - 707
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 10
- Number
- 2
- Start Page
- 703
- End Page
- 707
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/116854
- DOI
- 10.1016/j.cap.2009.09.004
- ISSN
- 1567-1739
- Abstract
- This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and rnicro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current-voltage measurements of the GaN rnicro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz-5 MHz. (C) 2009 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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