Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High-Dose, N+ Ion Implantation
- Authors
- Kim, Bumjoon; Lee, Kwangtaek; Jang, Samseok; Jhin, Junggeun; Lee, Seungjae; Baek, Jonghyeob; Yu, Youngmoon; Lee, Jaesang; Byun, Dongjin
- Issue Date
- 3월-2010
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- Epitaxial lateral overgrowth; Gallium nitride; Ion implantation; MOCVD
- Citation
- CHEMICAL VAPOR DEPOSITION, v.16, no.1-3, pp.80 - 84
- Indexed
- SCIE
SCOPUS
- Journal Title
- CHEMICAL VAPOR DEPOSITION
- Volume
- 16
- Number
- 1-3
- Start Page
- 80
- End Page
- 84
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/116958
- DOI
- 10.1002/cvde.200906807
- ISSN
- 0948-1907
- Abstract
- An epitaxial, laterally-overgrown (ELOG) GaN layer is deposited on a Si(111) substrate using high-dose, N+ ion implantation. ELOG GaN is deposited on a Si(111) wafer with implantation stripes by metal-organic (MO) CVD. The GaN layer on the N+ ion-implanted region is polycrystalline and acts as a mask for the ELOG process. This is attributed to the growth rate of the polycrystalline GaN being much slower than that of epitaxial GaN. After 120 min, complete coalescence is achieved with a flat surface. Scanning cathodoluminescence (CL) microscopy and high resolution X-ray diffraction (HRXRD) confirm the high optical and crystalline quality of the ELOG GaN layer.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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