Improved local oxidation of silicon carbide using atomic force microscopy
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jo, Yeong-Deuk | - |
dc.contributor.author | Seo, Soo-Hyung | - |
dc.contributor.author | Bahng, Wook | - |
dc.contributor.author | Kim, Sang-Cheol | - |
dc.contributor.author | Kim, Nam-Kyun | - |
dc.contributor.author | Kim, Sang-Sig | - |
dc.contributor.author | Koo, Sang-Mo | - |
dc.date.accessioned | 2021-09-08T05:05:15Z | - |
dc.date.available | 2021-09-08T05:05:15Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2010-02-22 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/116977 | - |
dc.description.abstract | The atomic force microscopy-based local oxidation (AFM-LO) of silicon carbide (SiC) is extremely difficult in general, mainly due to their physical hardness and chemical inactivity. Herein, we report the strongly enhanced AFM-LO of 4H-SiC at room temperature without the heating, chemicals or photoillumination. It is demonstrated that the increased tip loading force (similar to>100 nN) on the highly doped SiC can produce a high enough electric field (similar to 8x10(6) V/cm) under the cathode tip for transporting oxyanions, thereby leading to direct oxide growth on 4H-SiC. The doping concentration and electric field profile of the tip-SiC sample structures were further examined by two-dimensional numerical simulations. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | NATIVE-OXIDE DECOMPOSITION | - |
dc.subject | 6H-SIC(0001) SURFACE | - |
dc.subject | NANOOXIDATION | - |
dc.subject | KINETICS | - |
dc.subject | AFM | - |
dc.title | Improved local oxidation of silicon carbide using atomic force microscopy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sang-Sig | - |
dc.identifier.doi | 10.1063/1.3327832 | - |
dc.identifier.scopusid | 2-s2.0-77749298001 | - |
dc.identifier.wosid | 000275027200038 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.96, no.8 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 96 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NATIVE-OXIDE DECOMPOSITION | - |
dc.subject.keywordPlus | 6H-SIC(0001) SURFACE | - |
dc.subject.keywordPlus | NANOOXIDATION | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | AFM | - |
dc.subject.keywordAuthor | atomic force microscopy | - |
dc.subject.keywordAuthor | doping profiles | - |
dc.subject.keywordAuthor | electric field effects | - |
dc.subject.keywordAuthor | oxidation | - |
dc.subject.keywordAuthor | silicon compounds | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
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