Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures
- Authors
- Jung, Younghun; Mastro, Michael; Hite, Jennifer; Eddy, Charles R., Jr.; Kim, Jihyun
- Issue Date
- 1-Jan-2010
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Gallium nitride; Non-polar structure; Schottky contact; Scanning electron microscopy; X-ray diffraction; Metal-organic chemical vapor deposition
- Citation
- THIN SOLID FILMS, v.518, no.6, pp.1747 - 1750
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 518
- Number
- 6
- Start Page
- 1747
- End Page
- 1750
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/117184
- DOI
- 10.1016/j.tsf.2009.11.069
- ISSN
- 0040-6090
- Abstract
- A non-polar AlGaN/GaN structure is a strong candidate for the high-voltage device that can operate in enhancement-mode compared to the depletion-mode operation that is practically unavoidable for a standard polar AlGaN/GaN structure. Growth of non-polar GaN is non-trivial and a two-step nucleation scheme was developed to produce high-quality non-polar a-plane AlGaN/GaN structures on r-plane sapphire. The anisotropic nature of non-polar GaN requires a modification to a typical polar GaN-based transistor fabrication process. A KOH wet etch proceeded by a dramatically different mechanism compared to the standard polar c-face AlGaN/GaN structure. This device with Pt/Au Schottky gate displayed a barrier height of 0.76 eV and an ideality factor of 4 at 20 degrees C. (C) 2009 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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