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Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures

Authors
Jung, YounghunMastro, MichaelHite, JenniferEddy, Charles R., Jr.Kim, Jihyun
Issue Date
1-Jan-2010
Publisher
ELSEVIER SCIENCE SA
Keywords
Gallium nitride; Non-polar structure; Schottky contact; Scanning electron microscopy; X-ray diffraction; Metal-organic chemical vapor deposition
Citation
THIN SOLID FILMS, v.518, no.6, pp.1747 - 1750
Indexed
SCIE
SCOPUS
Journal Title
THIN SOLID FILMS
Volume
518
Number
6
Start Page
1747
End Page
1750
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/117184
DOI
10.1016/j.tsf.2009.11.069
ISSN
0040-6090
Abstract
A non-polar AlGaN/GaN structure is a strong candidate for the high-voltage device that can operate in enhancement-mode compared to the depletion-mode operation that is practically unavoidable for a standard polar AlGaN/GaN structure. Growth of non-polar GaN is non-trivial and a two-step nucleation scheme was developed to produce high-quality non-polar a-plane AlGaN/GaN structures on r-plane sapphire. The anisotropic nature of non-polar GaN requires a modification to a typical polar GaN-based transistor fabrication process. A KOH wet etch proceeded by a dramatically different mechanism compared to the standard polar c-face AlGaN/GaN structure. This device with Pt/Au Schottky gate displayed a barrier height of 0.76 eV and an ideality factor of 4 at 20 degrees C. (C) 2009 Elsevier B.V. All rights reserved.
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