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Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact
- Authors
- Song, June O.; Ha, Jun-Seok; Seong, Tae-Yeon
- Issue Date
- 1월-2010
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Gallium nitride; light-emitting diodes (LEDs); transparent and reflective ohmic contacts
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.1, pp.42 - 59
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 57
- Number
- 1
- Start Page
- 42
- End Page
- 59
- ISSN
- 0018-9383
- Abstract
- GaN-based semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further improvement of LED performance can be achieved through the enhancement of external quantum efficiency. In this regard, high-quality p-type ohmic electrodes having low contact resistance and high transmittance (or reflectivity), along with thermal stability, must be developed because p-type ohmic contacts play a key role in the performance of LEDs. In this paper, we review recent advances in p-type ohmic-contact technology for GaN-based LEDs. A variety of methods for forming transparent and reflective ohmic contacts are introduced.
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