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GaN Power SIT의 설계변수에 따른 전기적 특성변화에 관한 연구A Study on the Electrical Characteristics with Design Parameters in GaN Power Static Induction Transistor
- Other Titles
- A Study on the Electrical Characteristics with Design Parameters in GaN Power Static Induction Transistor
- Issue Date
- 2010
- Publisher
- 한국전기전자재료학회
- Keywords
- Wide bandgap; GaN power device; Breakdown voltage
- Citation
- 전기전자재료학회논문지, v.23, no.9, pp.671 - 675
- Indexed
- KCI
- Journal Title
- 전기전자재료학회논문지
- Volume
- 23
- Number
- 9
- Start Page
- 671
- End Page
- 675
- ISSN
- 1226-7945
- Abstract
- Gallium nitride (GaN), wide bandgap semiconductor, has attracted much attention because they are projected to have much better performance than silicon. In this paper, effects of design parameters change of GaN power static induction transistor (SIT) on the electrical characteristics (breakdown voltage, on resistance) were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get power GaN SIT that has 600 V class breakdown voltage. As a result, we could get optimized 600 V class power GaN SIT that has higher breakdown voltage and lower On resistance with a thin (a several micro-meters) thickness of the channel layer.
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