HBr/Ar/CHF3 혼합가스를 이용한 ZnO 박막의 유도결합 플라즈마 식각Etching Characteristics of ZnO Thin Films Using Inductively Coupled Plasma of HBr/Ar/CHF3 Gas Mixtures
- Other Titles
- Etching Characteristics of ZnO Thin Films Using Inductively Coupled Plasma of HBr/Ar/CHF3 Gas Mixtures
- Authors
- 김문근; 함용현; 권광호; 이현우
- Issue Date
- 2010
- Publisher
- 한국전기전자재료학회
- Keywords
- ZnO; XPS; Etching; ICP; Langmuir probe
- Citation
- 전기전자재료학회논문지, v.23, no.12, pp.915 - 918
- Indexed
- KCI
- Journal Title
- 전기전자재료학회논문지
- Volume
- 23
- Number
- 12
- Start Page
- 915
- End Page
- 918
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/117920
- ISSN
- 1226-7945
- Abstract
- In this work, the etching characteristics of ZnO thin films were investigated using an inductively coupled plasma(ICP) of HBr/Ar/CHF3 gas mixtures. The plasma characteristics were analyzed by a quadrupole mass spectrometer (QMS) and double langmuir probe (DLP). The surface reaction of the ZnO thin films was investigated using X-ray photoelectron spectroscopy (XPS). The etch rate of ZnO was measured as a function of the CHF3 mixing ratio in the range of 0–15% in an HBr:Ar=5:2 plasma at a fixed gas pressure (6mTorr), input power (700 W) ,bias power (200 W) and total gas flow rate(50sccm). The etch rate of the ZnO films decreased with increasing CHF3 fraction due to the etch-blocking polymer layer formation.
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Collections - Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles
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