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이중 이온주입 공정을 이용한 트렌치 필드링 설계 최적화 및 전기적 특성에 관한 연구The Research on Trench Etched Field Ring with Dual Ion-Implantation for Power Devices
- Other Titles
- The Research on Trench Etched Field Ring with Dual Ion-Implantation for Power Devices
- Issue Date
- 2010
- Publisher
- 한국전기전자재료학회
- Keywords
- Power device; Edge termination; Trench field ring; Dual ion-implantation; Power device; Edge termination; Trench field ring; Dual ion-implantation
- Citation
- 전기전자재료학회논문지, v.23, no.5, pp 364 - 367
- Pages
- 4
- Indexed
- KCI
- Journal Title
- 전기전자재료학회논문지
- Volume
- 23
- Number
- 5
- Start Page
- 364
- End Page
- 367
- ISSN
- 1226-7945
- Abstract
- The dual ion-implantation trench edge termination techniques were investigated and optimized using a two-dimensional device simulator. By trenching the field ring site which would be dual implanted, a better blocking capability can be obtained. The results show that the p-n junction with dual implanted junction field-ring can accomplish nearly 20% increase of breakdown voltage in comparison with the conventional trench field-rings. The fabrication is relatively difficult. But the trench etched field ring with dual ion-implantation is surpassed for breakdown voltage and consume same area and extensive device simulations as well as qualitative analysis confirm these conclusions.
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