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카드뮴 셀레나이드 양자점과 단일벽 탄소나노튜브로 구성된이종 나노 소재를 기반으로 한 광전소자의 제작 및 특성평가Fabrication and characterization of optoelectronic device usingCdSe nanocrystal quantum dots/single-walled carbon nanotubes

Other Titles
Fabrication and characterization of optoelectronic device usingCdSe nanocrystal quantum dots/single-walled carbon nanotubes
Authors
심형철정소희한창수김수현
Issue Date
2010
Publisher
한국센서학회
Keywords
nanocrystal quantum dot(NQD); single-walled carbon nanotube(SWNT); charge transfer
Citation
센서학회지, v.19, no.2, pp.160 - 167
Indexed
KCI
Journal Title
센서학회지
Volume
19
Number
2
Start Page
160
End Page
167
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/118168
ISSN
1225-5475
Abstract
In this paper, we fabricated the optoelectronic device based on Cadmium selenide(CdSe) nanocrystal quantum dots (NQDs)/single-walled carbon nanotubes(SWNTs) heterostructure using dieletrophoretic force. The efficient charge transfer phenomena from CdSe to SWNT make CdSe-Pyridine(py)-SWNT unique heterostructures for novel optoelectronic device. The conductivity of CdSe-py-SWNT was increased when it was exposed at ultra violet(UV) lamp, and varied as a function of wavelength of incident light.
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