Improved Light Output Power of GaN-Based Light Emitting Diodes by Enhancing Current Spreading Using Single-Wall Carbon Nanotubes
- Authors
- Jung, Se-Yeon; Kim, Kyeong Heon; Jeong, Sang-Yong; Jeon, Joon-Woo; Moon, Jihyung; Lee, Sang Youl; Song, June-O; Byun, Young Tae; Seong, Yeon
- Issue Date
- 2010
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.2, pp.H33 - H35
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 13
- Number
- 2
- Start Page
- H33
- End Page
- H35
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/118560
- DOI
- 10.1149/1.3269189
- ISSN
- 1099-0062
- Abstract
- Single-wall carbon nanotubes (SWCNTs) have been combined with indium tin oxide (ITO to improve the output power of GaN-based light emitting diodes (LEDs). LEDs fabricated with the SWCNT/ITO contacts give a forward voltage of 3.61 V at 350 mA, which is slightly higher than that of LEDs with ITO-only contacts. The SWCNT/ITO and ITO-only contacts produce transmittance values of 91.5 and 94.4% at 460 nm, respectively. However, LEDs with SWCNTs show a higher output power by 60% at 20 mA compared to those without SWCNTs. Photoemission microscope analyses show that the well-dispersed SWCNT bundle efficiently serves as a current spreader. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3269189] All rights reserved.
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