Epitaxial Lateral Overgrowth of GaN on Sapphire Substrate Using High-Dose N+-Ion-Implantation

Abstract

An epitaxial laterally overgrown (ELOG) GaN layer was deposited on a (0001) sapphire substrate. Here we introduce a maskless and single-step epitaxial lateral overgrowth (ELO) process using high-dose N+-ion-implantation. We employed high-dose N+-ion-implantation as an ELO mask instead of usual dielectric material such as SixNy or SiO2. The GaN layer was laterally grown over the ion implanted array formed in a stripe pattern of 4 mu m width, resulting in a complete coalescence after approximately 2.5 mu m of growth in the (0001) direction. Transmission electron microscopy and photoluminescence analysis confirmed the reduced dislocation density of the ELO grown GaN layer. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3503539] All rights reserved.