Epitaxial Lateral Overgrowth of GaN on Sapphire Substrate Using High-Dose N+-Ion-Implantation
- Authors
- Kim, Bumjoon; Jang, Samseok; Kim, Sangil; Kim, Youngseok; Lee, Jaesang; Byun, Dongjin
- Issue Date
- 2010
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.12, pp.II1132 - II1134
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 157
- Number
- 12
- Start Page
- II1132
- End Page
- II1134
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/118593
- DOI
- 10.1149/1.3503539
- ISSN
- 0013-4651
- Abstract
- An epitaxial laterally overgrown (ELOG) GaN layer was deposited on a (0001) sapphire substrate. Here we introduce a maskless and single-step epitaxial lateral overgrowth (ELO) process using high-dose N+-ion-implantation. We employed high-dose N+-ion-implantation as an ELO mask instead of usual dielectric material such as SixNy or SiO2. The GaN layer was laterally grown over the ion implanted array formed in a stripe pattern of 4 mu m width, resulting in a complete coalescence after approximately 2.5 mu m of growth in the (0001) direction. Transmission electron microscopy and photoluminescence analysis confirmed the reduced dislocation density of the ELO grown GaN layer. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3503539] All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholar.korea.ac.kr/handle/2021.sw.korea/118593)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.