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SiO2-Tolerant Grain-Boundary Conduction in Sr- and Mg-Doped Lanthanum Gallate
- Issue Date
- 2010
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- doping; electrical conductivity; electrical resistivity; gallium compounds; grain boundaries; impurities; lanthanum compounds; magnesium; silicon compounds; strontium; strontium compounds
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.3, pp.B28 - B31
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 13
- Number
- 3
- Start Page
- B28
- End Page
- B31
- ISSN
- 1099-0062
- Abstract
- The effect of SiO2 impurity on the grain-boundary conduction in Sr- and Mg-doped lanthanum gallate (La0.8Sr0.2Ga0.8Mg0.2O3-delta, LSGM) was studied. The grain-boundary conduction of LSGM was slightly affected, even by the addition of 500-2000 ppm SiO2, while the apparent grain-boundary resistivity was increased up to similar to 780 times in gadolinia-doped ceria by the doping of 500-2000 ppm SiO2. The high tolerance of the grain-boundary conduction against siliceous impurity in the LSGM specimen was explained by the gathering of the acidic siliceous phase near the basic SrO component.
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