Purification of metallurgical-grade silicon in fractional melting process
DC Field | Value | Language |
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dc.contributor.author | Lee, Woosoon | - |
dc.contributor.author | Yoon, Wooyoung | - |
dc.contributor.author | Park, Choonghwan | - |
dc.date.accessioned | 2021-09-08T10:39:35Z | - |
dc.date.available | 2021-09-08T10:39:35Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2009-12-15 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/118742 | - |
dc.description.abstract | The fractional melting process involves heating an alloy within its liquid-solid region, while simultaneously ejecting liquid from the solid-liquid mixture (the cake). The extent of purification obtained is comparable to that obtained in multi-pass zone refining. A new fractional melting process, in which the centrifugal force is used for separating the liquid from the cake, was developed and applied to the purification of metallurgical grade Si (MG-Si). The major impurities in MG-Si such as Fe, Ti, Al, and Cu can significantly degrade the efficiency of solar cells. So it is important to remove these metal elements from MG-Si to obtain high-quality silicon. Since these elements have low segregation coefficients in silicon, high purification is possible through the fractional melting process. By applying the fractional melting method, a mean refining ratio of 93% with a wetness of 0.038 was achieved during the refining of 2N-Si. A further increase in the refining ratio can be realized by either controlling the processing parameters or reducing the solid fraction. (C) 2009 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Purification of metallurgical-grade silicon in fractional melting process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Wooyoung | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2009.09.050 | - |
dc.identifier.scopusid | 2-s2.0-70449497818 | - |
dc.identifier.wosid | 000272900800027 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.312, no.1, pp.146 - 148 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 312 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 146 | - |
dc.citation.endPage | 148 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Purification | - |
dc.subject.keywordAuthor | Fractional melting | - |
dc.subject.keywordAuthor | Wetness | - |
dc.subject.keywordAuthor | Refining | - |
dc.subject.keywordAuthor | Metallurgical grade silicon | - |
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