Purification of metallurgical-grade silicon in fractional melting process
- Authors
- Lee, Woosoon; Yoon, Wooyoung; Park, Choonghwan
- Issue Date
- 15-12월-2009
- Publisher
- ELSEVIER
- Keywords
- Purification; Fractional melting; Wetness; Refining; Metallurgical grade silicon
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.312, no.1, pp.146 - 148
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 312
- Number
- 1
- Start Page
- 146
- End Page
- 148
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/118742
- DOI
- 10.1016/j.jcrysgro.2009.09.050
- ISSN
- 0022-0248
- Abstract
- The fractional melting process involves heating an alloy within its liquid-solid region, while simultaneously ejecting liquid from the solid-liquid mixture (the cake). The extent of purification obtained is comparable to that obtained in multi-pass zone refining. A new fractional melting process, in which the centrifugal force is used for separating the liquid from the cake, was developed and applied to the purification of metallurgical grade Si (MG-Si). The major impurities in MG-Si such as Fe, Ti, Al, and Cu can significantly degrade the efficiency of solar cells. So it is important to remove these metal elements from MG-Si to obtain high-quality silicon. Since these elements have low segregation coefficients in silicon, high purification is possible through the fractional melting process. By applying the fractional melting method, a mean refining ratio of 93% with a wetness of 0.038 was achieved during the refining of 2N-Si. A further increase in the refining ratio can be realized by either controlling the processing parameters or reducing the solid fraction. (C) 2009 Elsevier B.V. All rights reserved.
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