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Design of field limiting ring employing trench structure for high power devices

Authors
Lee, Jong-SeokSung, Man Young
Issue Date
10-Dec-2009
Publisher
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
Keywords
edge termination; trench; field limiting ring
Citation
IEICE ELECTRONICS EXPRESS, v.6, no.23, pp 1621 - 1625
Pages
5
Indexed
SCIE
SCOPUS
Journal Title
IEICE ELECTRONICS EXPRESS
Volume
6
Number
23
Start Page
1621
End Page
1625
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/118752
DOI
10.1587/elex.6.1621
ISSN
1349-2543
Abstract
Excellent voltage blocking capability and reliability can be obtained by trenching the field-limiting ring site which would be implanted. The trench etch step makes the junction depth deeper so that junction curvature effect and surface breakdown are less happened. The numerical analyses reveal two facts that the trenched field limiting ring has smaller maximum electric field and the electric field peak is deeper from the substrate surface, hence silicon dioxide layer can be protected. Therefore the voltage blocking capability and reliability of the new structure can be improved. The simulated results show that the trenched field limiting ring can have smaller critical electric field and accomplish near 30% increase of breakdown voltage in comparison with the conventional structure.
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