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Improved Performance in Charge-Trap-Type Flash Memories with an Al2O3 Dielectric by Using Bandgap Engineering of Charge-Trapping Layers
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Seo, Yu Jeong | - |
| dc.contributor.author | An, Ho Myoung | - |
| dc.contributor.author | Kim, Hee Dong | - |
| dc.contributor.author | Kim, Tae Geun | - |
| dc.date.accessioned | 2021-09-08T11:24:40Z | - |
| dc.date.available | 2021-09-08T11:24:40Z | - |
| dc.date.created | 2021-06-11 | - |
| dc.date.issued | 2009-12 | - |
| dc.identifier.issn | 0374-4884 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/118883 | - |
| dc.description.abstract | A band-engineered configuration of the new polycrystalline Si / Al2O3 / Si3N4 / SiO2 /Si (SANOS) device structure with a non-uniform nitride composition is proposed for high-density flash memories. The dramatic improvement can be attributed to the charge trapping efficiency, the data retention and the cycling endurance performance. The SANOS device designed in this paper holds promise for applications to next-generation charge-trap memory devices. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | KOREAN PHYSICAL SOC | - |
| dc.title | Improved Performance in Charge-Trap-Type Flash Memories with an Al2O3 Dielectric by Using Bandgap Engineering of Charge-Trapping Layers | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
| dc.identifier.doi | 10.3938/jkps.55.2689 | - |
| dc.identifier.scopusid | 2-s2.0-76249108410 | - |
| dc.identifier.wosid | 000272877800017 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.6, pp.2689 - 2692 | - |
| dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.citation.volume | 55 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 2689 | - |
| dc.citation.endPage | 2692 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.identifier.kciid | ART001429230 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
| dc.subject.keywordAuthor | SANOS | - |
| dc.subject.keywordAuthor | Si-rich | - |
| dc.subject.keywordAuthor | ANO | - |
| dc.subject.keywordAuthor | Bandgap engineering | - |
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)